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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION *With TO-220 package *Complement to type 2SC3230 *Good linearity of hFE APPLICATIONS *General purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -3 3 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IC=-0.5A ; VCE=-2V IE=0 ; VCB=10V;f=1MHz 70 25 100 40 MIN -30 -5 -0.3 2SA1276 TYP. MAX UNIT V V -0.8 -1.0 -1.0 -1.0 240 V V A A -0.75 MHz pF hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1276 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon Power Transistors 2SA1276 4 Inchange Semiconductor Product Specification Silicon Power Transistors 2SA1276 5 |
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